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this is information on a product in full production. april 2015 docid022821 rev 2 1/16 STD4NK100Z automotive-grade n-channel 1000 v, 5.6 ? typ., 2.2 a supermesh? power mosfet zener-protected in a dpak datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? extremely high dv/dt capability ? 100% avalanche tested ? gate charge minimized ? very low intrinsic capacitance ? zener-protected applications ? switching application description this device is an n-channel zener-protected power mosfet developed using stmicroelectronics? supermesh? technology, achieved through optimization of st?s well established strip-based powermesh? layout. in addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. note: htrb test has been performed at 80% of v (br)dss according to aec-q101 rev. c. all the other tests have been done according to the new rev. d. '7$% * 6 $0ybwde 7$% '3$. order code v dss r ds(on)max i d STD4NK100Z 1000 v 6.8 2.2 a table 1. device summary order code marking package packaging STD4NK100Z 4nk100z dpak tape and reel www.st.com
contents STD4NK100Z 2/16 docid022821 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid022821 rev 2 3/16 STD4NK100Z electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 1000 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 2.2 a i d drain current (continuous) at t c =100 c 1 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 8.8 a p tot total dissipation at t c = 25 c 90 w v esd(g-s) gate source esd (hbm-c=100pf, r=1.5 k ) 3000 v d v /d t (2) 2. i sd 2.2 a, di/dt 200 a/s, v dd v (br)dss , t j t jmax. peak diode recovery voltage slope 4.5 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.39 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t jmax ) 2.2 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar , v dd =50 v) 110 mj
electrical characteristics STD4NK100Z 4/16 docid022821 rev 2 2 electrical characteristics (t case =25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 1000 v i dss zero gate voltage drain current (v gs = 0) v ds = 1000 v, v ds = 1000 v, tc = 125 c 1 50 a a i gss gate body leakage current (v gs = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1.1 a 5.6 6.8 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =25 v, f=1 mhz, v gs =0 - 601 - pf c oss output capacitance - 53 - pf c rss reverse transfer capacitance -12-pf c oss. eq (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs =0, v ds =0 v to 800 v - 15 - pf t d(on) turn-on delay time v dd =500 v, i d = 1.25 a, r g =4.7 , v gs =10 v (see figure 16 ) -15-ns t r rise time - 7.5 - ns t d(off) off-voltage rise time - 32 - ns t f fall time - 39 - ns q g total gate charge v dd =800 v, i d = 2.5 a v gs =10 v (see figure 15 ) -18-nc q gs gate-source charge - 3.6 - nc q gd gate-drain charge - 9.2 - nc
docid022821 rev 2 5/16 STD4NK100Z electrical characteristics 16 the built-in back-to-back zener diodes have specifically been designed to enhance the device's esd capability. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 2.2 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 8.8 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5% forward on voltage i sd = 2.2 a, v gs =0 - 1.6 v t rr reverse recovery time i sd = 2.5 a, di/dt = 100 a/s, v dd =100 v (see figure 14 ) - 584 ns q rr reverse recovery charge - 2.3 c i rrm reverse recovery current - 8 a t rr reverse recovery time i sd = 2.5 a, di/dt = 100 a/s, v dd =100 v, t j =150 c (see figure 14 ) - 628 ns q rr reverse recovery charge - 2.5 c i rrm reverse recovery current - 8.1 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d =0 30 - v
electrical characteristics STD4NK100Z 6/16 docid022821 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v (br)dss vs. temperature figure 7. stat ic drain-source on-resistance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv pv 7m ?& 7f ?& 6lqjohsxovh ?v *,3')65
docid022821 rev 2 7/16 STD4NK100Z electrical characteristics 16 figure 8. gate charge vs. gate-source voltage figure 9. capacitance variations figure 10. normalized ga te threshold voltage vs. temperature figure 11. normalized on-resistance vs. temperature figure 12. source-drain diode forward characteristics figure 13. maximum avalanche energy vs tj
test circuits STD4NK100Z 8/16 docid022821 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circui t for inductive load switching and diode recovery times figure 17. unclamped inducti ve load test circuit figure 18. unclamped induc tive waveform fi gure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid022821 rev 2 9/16 STD4NK100Z package information 16 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package information STD4NK100Z 10/16 docid022821 rev 2 figure 20. dpak (to-252) type a2 outline bw\sh$buhy
docid022821 rev 2 11/16 STD4NK100Z package information 16 table 9. dpak (to-252) type a2 mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 4.95 5.10 5.25 e 6.40 6.60 e1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 h 9.35 10.10 l 1.00 1.50 l1 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r0.20 v2 0 8
package information STD4NK100Z 12/16 docid022821 rev 2 figure 21. dpak (to-252) footprint (a) a. all dimensions are in millimeters )3bb5
docid022821 rev 2 13/16 STD4NK100Z packing information 16 5 packing information table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packing information STD4NK100Z 14/16 docid022821 rev 2 figure 22. tape for dpak (to-252) figure 23. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
docid022821 rev 2 15/16 STD4NK100Z revision history 16 6 revision history table 11. document revision history date revision changes 01-oct-2013 1 first release. 13-apr-2015 2 document status promoted from preliminary to production data. updated title and features in cover page. updated section 2.1: electrical characteristics (curves) and section 4: package information . minor text changes.
STD4NK100Z 16/16 docid022821 rev 2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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